3D Confocal Raman Imaging
High Resolution Material & Stress Analysis of Group III Nitrides
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Structured substrates are widely employed in semiconductor research and especially in current semiconductor development. The high demands on device quality and reliability make it increasingly important to have a detailed knowledge of the inherent strain and crystalline properties of device structures. X-ray diffraction is commonly used in order to probe film thicknesses, lattice constants and strain states of layer structures and scanning electron microscopy (SEM) is used to inspect surfaces and defects in the structure to understand the growth history.
In this article results are presented of 3D confocal Raman imaging measurements that reveal changes in the signal which can be attributed to strain as well as to changes in the lattice structure.
Dr. Thomas Dieing
Dr. Eberhard Richter