Feb. 04, 2013
Applications

3D Confocal Raman Imaging

High Resolution Material & Stress Analysis of Group III Nitrides

  • Fig. 1: SEM Image of the structures. Vertical lines are steps due to cleavage with a higher line density in regions of direct contact between GaN and sapphire.Fig. 1: SEM Image of the structures. Vertical lines are steps due to cleavage with a higher line density in regions of direct contact between GaN and sapphire.

Structured substrates are widely employed in semiconductor research and especially in current semiconductor development. The high demands on device quality and reliability make it increasingly important to have a detailed knowledge of the inherent strain and crystalline properties of device structures. X-ray diffraction is commonly used in order to probe film thicknesses, lattice constants and strain states of layer structures and scanning electron microscopy (SEM) is used to inspect surfaces and defects in the structure to understand the growth history.

In this article results are presented of 3D confocal Raman imaging measurements that reveal changes in the signal which can be attributed to strain as well as to changes in the lattice structure.

Authors
Dr. Thomas Dieing
Marius Henrich

WITec GmbH
Ulm, Germany
www.witec.de

Dr. Eberhard Richter
Ferdinand-Braun-Institute
Berlin, Germany
http://www.fbh-berlin.com/welcome

Contact

WITec GmbH
Lise-Meitner-Str. 6
89081 Ulm
Germany
Phone: +49 731 140 700
Telefax: +49 731 140 70 200

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