Jun. 11, 2012
Applications

EDS Analysis with Silicon Drift Detectors at High Spatial Resolution

Advances in Low Energy X-ray Analysis

  • Fig. 3: High spatial resolution EDS maps of semiconductors. a) 150 nm thin sample prepared by focused ion beam. Fig. 3: High spatial resolution EDS maps of semiconductors. a) 150 nm thin sample prepared by focused ion beam.

Continuing technological advances require the element analysis of increasingly smaller structures in many fields of materials science, including semiconductors and nanotechnology in general. The element composition of thin electron transparent samples can be analyzed in the nm-range using transmission electron microscopes (TEM) or, specific sample holders provided, in the field emission scanning electron microscope (FE-SEM). Nevertheless both methods often require complex sample preparation. An alternative method is to analyze bulk samples with a FE-SEM. In order to decrease the excitation volume for generated X-rays, low accelerating voltages are required. Consequently, only low energy X-ray lines can be evaluated. Specific examples of this approach are discussed below. They demonstrate that features in bulk structures at the sub-µm scale can be analyzed very quickly using silicon drift detector (SDD) technology and modern data processing.

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Bruker Nano Analytics
Schwarzschildstr. 12
12489 Berlin
Germany
Phone: +49 30 670 990 0
Telefax: +49 30 670 990 30

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