silicon drift detectors
Jun. 11, 2012
Continuing technological advances require the element analysis of increasingly smaller structures in many fields of materials science, including semiconductors and nanotechnology in general. The element composition of thin electron transparent samples can be analyzed in the nm-range using transmission electron microscopes (TEM) or, specific sample holders provided, in the field emission scanning electron microscope (FE-SEM). Nevertheless both methods often require complex sample preparation. An alternative method is to analyze bulk samples with a FE-SEM.
moreNov. 03, 2009
The development of modern technology affects the science of small objects in two ways. On one hand better means for handling, imaging and analysis of miniature objects are provided, which means we can try and understand our world on a much smaller scale. On the other hand further miniaturization in manufacturing necessitates the control of technological processes at a minimum of one order of magnitude below the aspired device size. The need for rapid and efficient nanoanalysis is growing very quickly. The next generation 22 nm node in microelectronics architecture is approaching.
moreJul. 01, 2007
Thomas Schülein opened EDS Microanalysis Colloquium in Berlin: Exciting new insights into EDS microanalysis were delivered at the colloquium "New developments in EDS Analysis at the Scanning Electron Microscope - 4th Generation Liquid Nitrogen Free Silicon Drift Detectors (SDD)" from June 11th to 12th in Berlin Adlershof. Over 120 scientists from Germany, Austria and Switzerland attended the event initiated by Bruker AXS Microanalysis in cooperation with the Federal Institute for Materials Research & Testing (BAM) and the Physikalisch Technische Bundesanstalt (PTB).