Nov. 02, 2009
Applications

Analysing Solar Cell Material Properties with Confocal Raman Microscopy

High-sensitive Stress Measurements around Wire Holes on a Si-solar-cell Device

  • Splash of Si onto the surface out of the hole (bottom right). Plotted is the integrated intensity of the 1st order Si peak.Splash of Si onto the surface out of the hole (bottom right). Plotted is the integrated intensity of the 1st order Si peak.

Energy generation using photovoltaic devices is regarded as an important component in overcoming future energy shortages. This is reflected in a dramatic increase in photovoltaic production and demand. In the research and development of photovoltaic devices, the primary goals are to increase the conversion efficiency of the solar cells or to improve the production process. For these studies, a detailed knowledge of the micro- and nanostructures along with the chemical properties is essential for further improvements.  A valuable tool for these investigations is Confocal Raman Imaging, as it not only reveals optical information but also information regarding the 3D distribution of the chemical compounds, crystallinity and material stress. The following study describes the application of Confocal Raman Imaging for the analysis of stress fields around laser-drilled holes on a Si solar cell using the large area scanning capabilities of the WITec alpha500 Confocal Raman Microscope.

Authors

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WITec GmbH
Lise-Meitner-Str. 6
89081 Ulm
Germany
Phone: +49 731 140 700
Telefax: +49 731 140 70 200

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