Quantification of TSV misalignments with high resolution micro-CT
- Read Whitepaper
This white paper from Tescan is about quantification of Through-Silica Via misalignments with high resolution micro-CT
Micro bumps and Through-Silica Via (TSV) pitches enable high density connections between two or more stacks of microchips. Those vertical connections that pass completely through a silicon die are essential components in electronic engineering. By using high resolution X-ray CT, the complete 3D structure of the microchip can be visualized and measured. Stacking orientation, bounding features and misalignments can be quantified with a spatial resolution of 500 nm.
Read full application note here.