Jan. 16, 2019
Applications

Stacked Microchips

Quantification of TSV misalignments with high resolution micro-CT

  • Overview of the UniTOM system. The sample is mounted on a rotational stage, located in-between the X-ray source and detector. The coordinate system of the UniTOM enables the automatic registration of volume of interest scans in the overview image.Overview of the UniTOM system. The sample is mounted on a rotational stage, located in-between the X-ray source and detector. The coordinate system of the UniTOM enables the automatic registration of volume of interest scans in the overview image.

This white paper from Tescan is about quantification of Through-Silica Via misalignments with high resolution micro-CT

Micro bumps and Through-Silica Via (TSV) pitches enable high density connections between two or more stacks of microchips. Those vertical connections that pass completely through a silicon die are essential components in electronic engineering. By using high resolution X-ray CT, the complete 3D structure of the microchip can be visualized and measured. Stacking orientation, bounding features and misalignments can be quantified with a spatial resolution of 500 nm.

Read full application note here.

Contact

Tescan a.s
Libušina třída 21
623 00 Brno
Czech Republic
Phone: +420 547 130 411
Telefax: +420 547 130 415

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